| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a1029c1a51afb5222c7d083efecd8546 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-405
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2933-0058
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-156
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2933-0025
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-46 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-42
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-382
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-005
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-153
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-46
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-60 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-46 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-42
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-08 |
| filingDate |
2022-02-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a4486de340c934b1ebe62e6d935db153
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_96c29642b289bdba74a0954dac7df70b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3bf4b283a4515ef1bf0cac70c428001e |
| publicationDate |
2022-08-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2022177998-A1 |
| titleOfInvention |
Self-aligned ito dbr based p-contact for small pitch micro-led |
| abstract |
A micro-light emitting diode includes a substrate including at least a first portion of an n-type semiconductor layer, and a mesa structure on the substrate and characterized by a linear lateral dimension equal to or less than about 3 m. The mesa structure includes a plurality of epitaxial layers, and a conductive distributed Bragg reflector (DBR) on the plurality of epitaxial layers. The conductive DBR includes a plurality of transparent conductive oxide layers and covers between about 80% and about 100% of a full lateral area of the plurality of epitaxial layers. The micro-LED also includes a dielectric layer on sidewalls of the mesa structure, a reflective metal layer on sidewalls of the dielectric layer and electrically coupled to the first portion of the n-type semiconductor layer, and a first metal electrode in direct contact with the conductive DBR. |
| priorityDate |
2021-02-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |