http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2022096640-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5cbdcef193028e67144a7bace9f53ce3 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y15-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N27-4145 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N27-4146 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-535 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N27-308 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41733 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N27-4145 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1606 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B82Y15-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N27-414 |
| filingDate | 2021-11-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9e8a1e2d86db59b4d072d971419e890a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c464da58b9420db79e0ef6caf254ff5e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_169a36af0dbd88891f60e05ff650a40e |
| publicationDate | 2022-05-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | WO-2022096640-A1 |
| titleOfInvention | Sensor having graphene transistors |
| abstract | A sensor (20, 200, 1200, 30) for performing measurements is disclosed. It comprises: a substrate (29, 129, 39); a plurality of graphene field-effect transistors (GFET) (21, 121, 31) deposited on a central area of the substrate (29, 129, 39), the GFETs being disposed forming a first row and a second row of GFETs; at least one source electrode (22, 122, 32) connected to the GFETs (21, 121, 31) through at least one first metal track (23, 123, 33), wherein the at least one source electrode (22, 122, 32) is disposed at the periphery of the substrate (29, 39, 129); at least one drain electrode (24A-24C, 124A-124D, 34) connected to the GFETs (21, 121, 31) through at least one second metal track (25A-25C, 125A-125D, 35), wherein the at least one drain electrode (24A-24C, 124A-124D, 34) is disposed at the periphery of the substrate (29, 39, 129); and at least one gate electrode (26, 26B, 126A-126D, 36) which is not in physical contact with the GFETs, the at least one gate electrode being disposed at least in part at the center of the substrate (29, 39, 129) and between the first row and the second row of GFETs, wherein, in use of the sensor (20, 200, 30), when a sample is deposited in contact with the at least one gate electrode (26, 26B, 126A-126D, 36) and the GFETs (21, 121, 31), the sample allows gating between the at least one gate electrode (26, 26B, 126A-126D, 36) and the GFETs (21, 121, 31), wherein the area of the at least one gate electrode is at least 50 times larger than the area of each GFET. |
| priorityDate | 2020-11-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 71.