http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2022071330-A1

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filingDate 2021-09-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8af91f9450262437b2ebac09d6e41ec5
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publicationDate 2022-04-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber WO-2022071330-A1
titleOfInvention Semiconductor laser element
abstract This semiconductor laser element that can reduce one-dimensional local oscillation comprises a substrate, an active layer, and a phase modulation layer. The phase modulation layer includes a basic layer, and a plurality of different refractive index regions arranged two-dimensionally on a reference plane. In a virtual square lattice set on the reference plane, the center of gravity of each different refractive index region is arranged separated from the corresponding lattice point, and the angle of the vector that connects the corresponding lattice point and center of gravity is individually set for each different refractive index region. The lattice spacing of the virtual square lattice and the light emission wavelength of the active layer satisfy the condition of Γ point oscillation. The center of gravity of each different refractive index region is arranged so that the absolute value of the Fourier coefficient of a ring shape or a circular shape obtained by rotating each different refractive index region with the corresponding lattice point as the center is 0.01 or less.
priorityDate 2020-10-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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