http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2022022728-A1

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filingDate 2021-07-31-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7415d3deffab14de6399b4fd265bcfa5
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publicationDate 2022-02-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber WO-2022022728-A1
titleOfInvention Patterning material and patterned film
abstract Provided is a patterning material, comprising a polysiloxane. The polysiloxane comprises at least one cyclic structure formed by repeating Si-O bonds and an organic group attached to the Si atom in the cyclic structure, wherein some of the Si atoms in at least one of the cyclic structures are replaced by a metal element, and/or at least one of the organic groups comprises a halogen element. The patterning material of the present application has a high sensitivity and a high pattern resolution under the irradiation of 1-15 nm X-rays, and can achieve a high-quality and high-efficiency patterning process. The patterning material of the present application is used for preparing electronic components such as chips, and the accuracy and the preparation efficiency of the electronic components can be improved. Also provided is a patterned film formed by the patterning material.
priorityDate 2020-07-31-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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