| abstract |
A method for making a dense organosilicon film with improved mechanical properties, the method comprising the steps of: providing a substrate within a reaction chamber; introducing into the reaction chamber a gaseous composition comprising hydridodimethyl-alkoxysilane; and applying energy to the gaseous composition comprising hydridodimethyl-alkoxysilane in the reaction chamber to induce reaction of the gaseous composition comprising hydrido-dimethyl-alkoxysilane to deposit an organosilicon film on the substrate, wherein the organosilicon film has a dielectric constant from ~ 2.70 to ~ 3.50, an elastic 10 modulus of from ~ 6 to ~ 36 GPa, and an at. % carbon from ~ 10 to ~ 36 as measured by XPS. |