| abstract |
An embodiment relates to a ceramic component, and a plasma etching apparatus and the like which comprise same. One embodiment relates to a ceramic component to be applied to a plasma etching apparatus, wherein the ceramic component comprises a composite, and a substrate that is filled while coming in contact with the composite, the composite comprises a boron carbide-based material and/or a carbon-based material, the substrate comprises a boron carbide-based material, the ratio Iab/Icd of the sum Iab of the intensity Ia of a peak around 481 cm-1 and the intensity Ib of a peak around 534 cm-1 to the sum Icd of the intensity Ic of a peak around 270 cm-1 and the intensity Id of a peak around 320 cm-1 in the Raman shift spectrum measured by Raman spectroscopy, of the boron carbide-based material of the composite, is 0.7-2.8, and the ratio Ie/If of the intensity Ie of a G band peak to the intensity If of a D band peak in the Raman shift spectrum measured by Raman spectroscopy, of the carbon-based material of the composite, is 0.2-2. |