| abstract |
Disclosed is a method for manufacturing a semiconductor wafer comprising a diamond layer and a semiconductor layer having a Group III nitride compound. The method comprises a step of arranging a nucleation layer on a SiC substrate and a step of arranging, on the nucleation layer, at least one semiconductor layer comprising a Group III nitride compound. The method further comprises the steps of: arranging a protective layer on the at least one semiconductor layer; bonding a carrier wafer comprising a SiC substrate to the protective layer; removing portions of the substrate, the nucleation layer, and the at least one semiconductor layer; arranging a diamond layer on the at least one semiconductor layer; depositing a support wafer on the diamond layer; and removing the carrier wafer and the protective layer. |