| abstract |
Disclosed are: a wafer comprising a diamond layer and a semiconductor layer having a group III nitride compound; and methods for manufacturing the wafer and a device. A nucleation layer, at least one semiconductor layer having a group III nitride compound, and a protective layer are formed on a silicon substrate. Afterward, a silicon carrier wafer is glass-bonded onto the protective layer. Subsequently, parts of the silicon substrate, the nucleation layer and the semiconductor layer are removed. After this, an intermediate layer, a seed layer and a first diamond layer are sequentially deposited on a group III nitride layer. Next, the silicon carrier wafer and the protective layer are removed. Then, a silicon substrate wafer comprising a protective layer, a silicon substrate and a diamond layer is prepared, and is glass-bonded onto the first diamond layer. |