http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2021145080-A1

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filingDate 2020-11-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_384d4a9e9a033675aa94d049677dc41c
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publicationDate 2021-07-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber WO-2021145080-A1
titleOfInvention Semiconductor apparatus
abstract Provided is a semiconductor apparatus comprising a semiconductor substrate having a transistor part and a diode part, the transistor part having an injection restriction area for restricting injection of a second-conductivity-type carrier in an end portion of a side of the diode part in a top view of the semiconductor substrate. Both the transistor part and the diode part have a second-conductivity-type base area on a front surface of the semiconductor substrate, the transistor part further has a first-conductivity-type emitter area and a second-conductivity-type drawing area having higher doping concentration than the base area on the front surface of the semiconductor substrate, and the injection restriction area is not provided with the emitter area and the drawing area.
priorityDate 2020-01-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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