http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2021136044-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8cfdd2235626b581d886d535ab65cb79 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K2102-00 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K50-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K50-115 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K50-166 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-56 |
| filingDate | 2020-12-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bf566fa2408497547b89bdbd53e8de43 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_79986f722c2b6cb7ab74d9dbe39a2d88 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1e9880544f4f998656f0a7ac34809373 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3498f8f3db9ccb9f58636f44b65347de |
| publicationDate | 2021-07-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | WO-2021136044-A1 |
| titleOfInvention | Quantum dot light-emitting diode and manufacturing method therefor |
| abstract | A quantum dot light-emitting diode and a manufacturing method therefor. The manufacturing method for the quantum dot light-emitting diode comprises the steps: providing an anode (2); forming a quantum dot light-emitting layer (4) on the anode (2); forming an electron transport layer (5) on the quantum dot light-emitting layer (4), the electron transport layer (5) comprising a ZnO layer and a ZnMgO layer which are provided in a stacked manner, and the ZnO layer being provided at a side close to the quantum dot light-emitting layer (4); and forming a cathode (6) on the electron transport layer (5), so as to obtain a quantum dot light-emitting diode. Without the introduction of other heterogeneous material layers, the use of interface barriers can control the injection of electrons, so as to balance the injection of electrons and holes. The ZnMgO can adjust the width of forbidden band of the electron transport layer (5), adjust the injection barriers for electrons, reduce the injection efficiency of electrons, and can balance the injection of electrons and holes, so as to achieve the purpose of promoting the effective radiative recombination of electrons and holes in the quantum dot light-emitting layer (4), thereby improving the efficiency of the device. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-114300630-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-114300630-B |
| priorityDate | 2019-12-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 56.