| abstract |
Provided are a polishing solution used for a carbon-containing material and a use method thereof. The chemical-mechanical polishing solution contains an abrasive, an oxidant, and organic phosphonic acid. According to the polishing solution, a by-product in a polishing process is prevented from depositing on a polishing pad while a high carbon-containing material removal rate is maintained, the service life of the polishing pad is prolonged, and the defects on the surface of a wafer after polishing are reduced. |