| abstract |
Disclosed is a chemical-mechanical polishing liquid, comprising abrasive particles, a metal corrosion inhibitor, a complexing agent, an oxidizing agent, and a polyoxyethylene-polyoxypropylene block copolymer surfactant. The chemical-mechanical polishing liquid can effectively reduce and control the generation of edge-over-erosion at a boundary between a dielectric material and a copper wire, and has a significant inhibitory effect on the removal rate of low-dielectric-constant materials while maintaining a high removal rate of tantalum and silicon dioxide, such that requirements for a polishing rate and selection ratio of various materials during polishing of a barrier layer are satisfied, a disc-shaped recess after polishing can be successfully controlled, and strict requirements for the smoothness of a polished interface during an advanced process are satisfied. |