| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0e433c1625fc509a087c912b440da84b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5eb3e7a35aed04a98a36060bc7b053bf |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-26506
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823807
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6659
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823412
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2652 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2253
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7833
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-26586
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823807
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-26506
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2652
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66537
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66492
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1045
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1083
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823412
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1041
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-167 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-772
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-335
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-085
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8232 |
| filingDate |
2020-12-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_217511910f235f2efa361ca30d5a13c1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_01a42f8f6b30889fe53c7aaf9cf38f0b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6a940845a0b0b8e6fa5aa5eb2d02dd4d |
| publicationDate |
2021-06-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2021127616-A1 |
| titleOfInvention |
Through-gate co-implant species to control dopant profile in transistors |
| abstract |
In a described example, an integrated circuit (IC) includes a metal oxide semiconductor (MOS) transistor (100) formed in a semiconductor substrate (106). The transistor (100) includes a gate structure (104) formed over a surface of the substrate (106) and source and drain regions having a first conductivity type formed in the substrate on both sides of the gate structure (104). A well region (112) having a second opposite conductivity type is between the source and drain regions under the gate structure (104). The well region (112) includes a well dopant and a through-gate co-implant species. The well dopant and the co-implant species have a retrograde profile extending from the surface of the substrate (106) into the well region (112). |
| priorityDate |
2019-12-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |