| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4c153525772cb2a94f93ded9580e72cd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fbc3b54bdbf69a262d1e9818c0819bcc |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-8833
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-8418
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B63-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-021
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-821
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-253 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-24 |
| filingDate |
2020-12-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8bd5521d5018b899a874f537001f3320
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_01f9e9a7c00c009d6fe29aaa230888e2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_06006fe459ba7b4fb657189f60c50079
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6e35399c3d38c5ca9a7e8813415a62cf |
| publicationDate |
2021-06-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2021124000-A1 |
| titleOfInvention |
Resistive random access memory cells integrated with vertical field effect transistor |
| abstract |
A one-transistor-two-resistor (1T2R) resistive random access memory (ReRAM) structure, and a method for forming the same, includes forming a vertical field effect transistor (VFET) including an epitaxial region (810) located above a channel region (502) and below a dielectric cap (708). The epitaxial region (810) includes two opposing protruding regions of triangular shape bounded by <111> planes that extend horizontally beyond the channel region (502). A ReRAM stack is conformally deposited on the VFET. The ReRAM stack includes an oxide layer (1910) located directly above the epitaxial region (810), a top electrode layer (1912) directly above the oxide layer (1910) and a metal fill (1920) above the top electrode layer (1912). Each of the two opposing protruding regions of the epitaxial region (810) acts as a bottom electrode for the ReRAM stack. |
| priorityDate |
2019-12-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |