| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8abb210936dc3b56af93e346a2335b7f |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S2304-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-04254
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S2301-176
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-2222 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-015
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-39
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-3054
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0207
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-34313
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-2222
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-227
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-50 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-015
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-283 |
| filingDate |
2020-12-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e717b4648b0f059c2babbf77e5cf9304 |
| publicationDate |
2021-06-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2021113981-A1 |
| titleOfInvention |
Buried heterostructure semiconductor optical amplifier and method for fabricating the same |
| abstract |
A method for fabricating a buried heterostructure semiconductor optical amplifier is provided. The method includes a step providing a patterned dielectric layer on a substrate, the patterned dielectric layer having openings to expose uncovered regions of the substrate. The method also includes, in a single metal organic chemical vapour deposition (MOCVD) run: etching the uncovered regions of the substrate to form angles at corresponding edges thereof and diffusing a p-dopant in the substrate to obtain a p-dopant distribution in a portion of the substrate; etching a portion of the p-dopant thereby defining a recess in the substrate and growing a n-blocking layer in the recess; sequentially growing, over a portion of the n-blocking layer, an active region, a p-overclad, a p-contact, and a p-metal contact; and growing a n-metal contact on a backside of the substrate. The single MOCVD run combines selective area growth, p-dopant diffusion and etching techniques. |
| priorityDate |
2019-12-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |