http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2021102722-A1

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_29276e5392179cf414e02ada9b4ab6be
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-22
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-042
filingDate 2019-11-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1098d1eb44940ea9f718349d3d2c94e2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ded3e70494d2318447f2385bcc04f6f4
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publicationDate 2021-06-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber WO-2021102722-A1
titleOfInvention Single-longitudinal-mode edge-emitting laser with side grating oxidation-confinement structure, and preparation method therefor
abstract A single-longitudinal-mode edge-emitting laser with a side grating oxidation-confinement structure, and a preparation method therefor. The single-longitudinal-mode edge-emitting laser with a side grating oxidation-confinement structure comprises an N-electrode layer; a substrate (8) arranged on the N-electrode layer; a lower cover layer (7) arranged on the substrate (8); a lower waveguide layer (6) arranged on the lower cover layer (7); an active region (5) arranged on the lower waveguide layer (6); and a ridge strip structure arranged on the active region (5). The ridge strip structure comprises: an upper waveguide layer (4) arranged on the active region (5); an intermediate high-aluminum component layer (3) arranged on the upper waveguide layer (4); an upper cover layer (2) arranged on the intermediate high-aluminum component layer (3); a contact layer (1) arranged on the upper cover layer (2); and a P-electrode layer (9) arranged on the contact layer (1); and a side grating structure that is arranged on a side portion of the ridge strip structure and is of a groove-shaped periodic structure. The present invention facilitates the realization of efficient current injection and a large-mode-volume fundamental transverse mode, and the selection of a grating in a low-loss mode.
priorityDate 2019-11-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 33.