| abstract |
The present invention is in the field of processes for preparing inorganic metal- or semimetal- containing films. The process for preparing inorganic metal- or semimetal-containing films comprising (a) depositing a metal- or semimetal-containing compound from the gaseous state onto a solid substrate and (b) bringing the solid substrate with the deposited metal- or semimetal-containing compound in contact with a compound of general formula (I) or (II) wherein Z is NR2, PR2, OR, SR, CR2, SiR2, X is H, R' or NR'2, wherein at least one X is H, n is 1 or 2, and R and R' is an alkyl group, an alkenyl group, an aryl group, or a silyl group. |