http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2021097894-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e8c1d0bca39c03834f1d4df1d0aa195b |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-455 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45527 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-52 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-305 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455 |
| filingDate | 2019-11-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1a90c362f84cc23b9aa690bf2df87b0f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_70b415a27d9108c12d24930b1c0dab54 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6e89af795ce516fbdf91757d5eae6165 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2ca3350d1286affbd5d4bfb408e5823d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c0d12db8cfc88bb751097a7ec31c1b9d |
| publicationDate | 2021-05-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | WO-2021097894-A1 |
| titleOfInvention | Method for preparing ag2s thin film |
| abstract | Disclosed is a method for preparing an Ag2S thin film, involving placing a substrate in a reaction chamber for atomic layer deposition, vacuumizing the reaction chamber and respectively heating the substrate, the reaction chamber, a pipeline and a reaction source to a designated temperature (S110), wherein the reaction source comprises a silver source and a sulfur source, which are successively deposited in a circulation manner; introducing the silver source into the reaction chamber at a first pulse time, and purging the reaction chamber with an inert gas at a first purge time (S120); introducing the sulfur source into the reaction chamber at a second pulse time, and purging the reaction chamber with the inert gas at a second purge time (S130); and subjecting the silver source and the sulfur source to atomic layer deposition in the reaction chamber to obtain a silver sulfide thin film sample, cooling the silver sulfide thin film sample in a vacuum environment in the reaction chamber to room temperature, and then taking out the silver sulfide thin film sample from the reaction chamber (S140). The method solves the technical problems present in the prior art of the thickness of a silver sulfide thin film being unable to be precisely controlled, and the silver sulfide thin film being unable to be produced on a large scale, and achieves the technical effects that the silver sulfide thin film maintains good three-dimensional shape retention, the thickness of the thin film is precisely controllable at a single atomic layer level, and the method can be suitable for large scale production. |
| priorityDate | 2019-11-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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