http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2021093796-A1

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filingDate 2020-11-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e28a14b6e32785422acf225c0907efc3
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publicationDate 2021-05-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber WO-2021093796-A1
titleOfInvention Piezoelectric mems acoustic sensor
abstract Provided is a piezoelectric MEMS acoustic sensor, comprising a substrate (1), an inner electrode area (13), and an outer electrode area (12); the outer electrode area (12) is located at the periphery of the inner electrode area (13), and each of the inner electrode area (13) and the outer electrode area (12) comprises a top electrode (9, 6), an upper piezoelectric layer (4), a middle electrode (10, 7), a lower piezoelectric layer (3), and bottom electrode (11, 8); the top electrode (9), middle electrode (10), and bottom electrode (11) in the inner electrode area (13) and the top electrode (6), middle electrode (7), and bottom electrode (8) in the outer electrode area (12) are separated from each other; a lower support layer (2) is provided on the top of the substrate (1), the inner electrode area (13) and the outer electrode area (12) are located on the lower support layer (2), and an upper support layer (5) made of silicon-based material is provided on the top surfaces of the inner electrode area (13) and the outer electrode area (12). The piezoelectric MEMS acoustic sensor has high sensitivity, strong resistance to hydrostatic pressure, and satisfies application requirements of different pressure resistance and operating water depth.
priorityDate 2019-11-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Total number of triples: 27.