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filingDate 2020-10-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2bc6ea054f841d6946389564ffb60a9c
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publicationDate 2021-04-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber WO-2021078888-A1
titleOfInvention Sensor comprising a solid-state layer structure, and method for producing said sensor
abstract The invention relates to a sensor comprising a solid-state layer structure which has the following elements: a first layer (110) having a semiconductor material; a second layer (150) having a gold material and an oxygen material; and an insulation layer (120) provided between the first and the second layer.
priorityDate 2019-10-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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