Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c10320b05f723976a898536f012b60c2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0847 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8258 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-092 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0847 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0673 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0688 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0924 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8258 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-161 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1608 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8221 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-775 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66439 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823807 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42392 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823821 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-16 |
filingDate |
2020-08-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5073c36b1fbfc950cb1f6e6e1c00f6c1 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_324c2b8f0a532bc2f0803f3eca00da7b |
publicationDate |
2021-04-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
WO-2021066951-A1 |
titleOfInvention |
Method of making multiple nano layer transistors to enhance a multiple stack cfet performance |
abstract |
A semiconductor device is provided. The semiconductor device has a first transistor pair formed over a substrate. The first transistor pair includes a n-type transistor and a p-type transistor that are stacked over one another. The n-type transistor has a first channel region that includes one or more first nano-channels with a first stress. The one or more first nano-channels extend laterally along the substrate, are stacked over the substrate and spaced apart from one another. The p-type transistor has a second channel region that includes one or more second nano-channels with a second stress. The one or more second nano-channels extend laterally along the substrate, are stacked over the substrate and spaced apart from one another. Each of the one or more first nano-channels in thefirst channel region and each of the one or more second nano-channels in the second channel region are surrounded by a gate structure respectively. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2022020744-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11594535-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2021351180-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11552080-B2 |
priorityDate |
2019-10-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |