| abstract |
Provided is a semiconductor device having a large storage capacity. The semiconductor device has first to sixth insulators, first to third conductors, and first to third material layers. The first insulator and the first material layer overlap the first conductor. The second material layer, the second conductor, the second insulator, and the third insulator overlap a first region of the first material layer. The third material layer is disposed in a second region of the first material layer, and in a region including top surfaces of the second material layer, the second conductor, the second insulator, and the third insulator, the fourth insulator is disposed on the third material layer, the sixth insulator is disposed on the fourth insulator, and the fifth insulator is disposed on the sixth insulator. The third conductor is disposed on the fifth insulator that overlaps the second region of the first material layer. The first to third material layers have an oxide containing indium, element M (M is aluminum, gallium, tin, or titanium), and zinc. |