| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5d7576285d411d00c697e07270d2814a |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S2304-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S2301-176
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-4031
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-026
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-1007
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-04256
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-2224
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-4012 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-2275
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-173
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-1014
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0264
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0265
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0427
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-03046 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-026 |
| filingDate |
2019-09-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_601ef755acd16370754cc1610212ee6b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a433e1a5c6fd61065d126cb16871c0c3 |
| publicationDate |
2021-03-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2021053711-A1 |
| titleOfInvention |
Semiconductor laser device |
| abstract |
The semiconductor laser device (100) comprises a laser section (20), a wave guide path (28) for propagating laser light emitted by the laser section (20), and a light detector (24) for detecting the laser light, which have been formed on the same semiconductor substrate (17). The light detector (24) comprises a p-type contact layer (35c) connected to an anodic electrode (96) and formed above the side of the wave guide path (28) facing away from the semiconductor substrate (17), an n-type contact layer (94) connected to a cathodic electrode (95), and an undoped layer (93) formed between the p-type contact layer (35c) and the n-type contact layer (94). The undoped layer (93) and the n-type contact layer (94) in the light detector (24) comprise a main light-receiving section (91) disposed above the wave guide path (28) in such a manner as to encompass the wave guide path (28) and an expansion section (92) disposed so as to connect to the main light-receiving section (91) while not encompassing the wave guide path (28). |
| priorityDate |
2019-09-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |