| abstract |
A conductive-bridge memory device comprises a memory cell that includes: a first metal layer 11; a second metal layer 12; a first insulation body layer 13 having a first surface 13a facing the first metal layer 11 and a second surface 13b facing the second metal layer 12, the second surface 13b being the surface opposite the first surface 13a, and the first insulation body layer 13 having a through hole that passes from the first surface 13a to the second surface 13b; and a liquid layer 14 comprising a liquid that includes a liquid electrolyte impregnated into the through hole 13h. |