| abstract |
The purpose of the present invention is to provide: Ag2E (E is at least one of tellurium, selenium, and sulfur) quantum dots which exhibit a distinct absorption peak in the near-infrared region and with which it is possible to control the absorption wavelength in the near-infrared region according to purpose; and a highly safe quantum dot production method with which mass production is possible and the absorption wavelength can be freely controlled within the near-infrared region according to purpose. A quantum dot according to the present invention is characterized by being a nanocrystal represented by Ag2E (E is at least one of Te, Se, and S) that contains silver and a chalcogen, and by having an average particle size of 1-15 nm, inclusive. In the present invention, it is preferable for the absorption wavelength to be in the range of the near-infrared region from 800-1700 nm. |