| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e8a8a5ffc54cd6736286e6a89c9c76b7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-46 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-44
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-382
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-58
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-62 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-15
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-22 |
| filingDate |
2019-08-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c7c678a1c532c96f1167ddf7bbe09cf5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d4b1cf7c4a237cec5252f01c4d1a3b53
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3112a37d3ddea7607c31e59c2ba9a684
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_596b25a07a0a2c274d9064cb2aa7ba0b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b72936f6e8af2fe99e4ac0752cab2691
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_683f878d54c67bda63f0609bea429706 |
| publicationDate |
2021-02-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2021022461-A1 |
| titleOfInvention |
Inverted light-emitting diode |
| abstract |
An inverted light-emitting diode (LED), comprising a patterned substrate (100) and an epitaxial light-emitting layer (200) located on the substrate. A partial region of the substrate is exposed from the epitaxial light-emitting layer, protrusions (111) of the exposed region of the substrate are at least partially covered by an insulating protective layer, the insulating protective layer on the protrusions of the exposed region of the substrate has high and low undulations, and the height (h) of the peak of the undulations is 0 to 0.5 micrometers. By means of reducing the fluctuation of undulations of the insulating protective layer near the epitaxial light-emitting layer, the insulating protective layer is prevented from breaking due to changes in stress in the insulating protective layer, the structure of the insulating protective layer is complete and may further enhance the reliability of a chip. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113594326-A |
| priorityDate |
2019-08-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |