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publicationDate 2021-01-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber WO-2021015377-A1
titleOfInvention Oxide thin-film transistor with hetero-junction through adjustment of oxygen partial pressure and manufacturing method therefor
abstract Disclosed are: an oxide thin-film transistor which enables the adjustment of oxygen vacancy in an oxide thin film by adjusting oxygen partial pressure during oxide thin-film deposition and after the deposition, treating the oxide thin film with a reducing agent, and through this, can have both a positive Vth value and high mobility by adjusting the concentration of carriers in the thin film; and a method for manufacturing same.
priorityDate 2019-07-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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