http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2021009426-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7bd1ce508c43f3b603b94f47917a29c3 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-16 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-15 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L25-0753 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-24 |
| classificationIPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-16 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-15 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-18 |
| filingDate | 2020-06-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2732418531b10ec68601cbe7d3be676e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_86967b2dfb0494a6562e9554da872894 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0266ed9bc97e8dc173271def7b757565 |
| publicationDate | 2021-01-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | WO-2021009426-A1 |
| titleOfInvention | Optoelectronic device in which the pixels contain light-emitting diodes that emit several colors and manufacturing method |
| abstract | Optoelectronic device (10) comprising a plurality of pixels (11) that each comprise at least one primary sub-pixel (lia) comprising a primary light-emitting diode (111) formed on a support face (110) of a substrate (101) provided with a first primary semiconductive portion (112) that has an overall elongated wire-like shape comprising a top end (112a), a primary lattice parameter accommodation layer (113) arranged on the top end (112) of the first primary semiconductive portion (112), a second primary active semiconductive portion (114) arranged at least on the primary lattice parameter accommodation layer (113), a third primary semiconductive portion (115) arranged on the second primary active semiconductive portion (114), wherein the primary lattice parameter accommodation layer (113) has, with the second primary active semiconductive portion (114), a first difference in primary lattice parameters between 2.12% and 0.93% relative to the second primary active semiconductive portion (114). |
| priorityDate | 2019-07-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 43.