http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2020262461-A1

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filingDate 2020-06-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9806dd5fa14733dde16dbecc0f1c7c7d
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publicationDate 2020-12-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber WO-2020262461-A1
titleOfInvention Solid-state imaging device and electronic apparatus
abstract The present invention can secure a saturated electric charge amount and improve low illuminance characteristics at the same time while suppressing an increase in size of a device and a decrease in pixel density. A solid-state imaging device according to an embodiment comprises: a first substrate (100) provided with a plurality of photoelectric conversion units (PD) arranged in a matrix; a second substrate (200) which is bonded to a first surface of the first substrate, and is provided with a pixel circuit (120) that generates a pixel signal based on the electric charges generated by each of the photoelectric conversion units; and a third substrate (300) which is bonded to a third surface of the second substrate, that is opposite to a second surface to which the first substrate is bonded, and is provided with a peripheral circuit that executes a predetermined process on the pixel signal generated by the pixel circuit. The pixel circuit includes: an electric charge storage unit (FD) that stores the electric charges generated by the photoelectric conversion unit; an amplification transistor (AMP) which generates the pixel signal with a voltage value corresponding to the amount of electric charges accumulated in the electric charge storage unit; and a switching transistor (FDG) which switches the capacitance of the electric charge storage unit.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2022210917-A1
priorityDate 2019-06-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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