http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2020257192-A1

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classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-406
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filingDate 2020-06-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d348bad8a90b74778fc209add38acfa0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_48c1c1699c0596e53dc6ac8957795c6a
publicationDate 2020-12-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber WO-2020257192-A1
titleOfInvention In-situ and selective area etching of surfaces or layers, and high-speed growth of gallium nitride, by organometallic chlorine precursors
abstract Methods and systems for in-situ and selective area etching of surfaces or layers, and high-speed growth of gallium nitride (GaN), by organometallic chlorine (Cl) precursors, are described herein. In one aspect, a method can include exposing a GaN layer or surface to an organometallic Cl precursor within a reactor under conditions sufficient to etch the layer or surface, thereby etching the GaN layer or surface. In another aspect, a method of growing GaN can include inputting a set of reactants comprising at least trimethylgallium (TMGa) and ammonia into an OMVPE reactor; inputting an organometallic Cl precursor into the OMVPE reactor; and reacting the Cl precursor with the TMGa and with the NH3 to deposit GaN by organometallic vapor phase epitaxy.
priorityDate 2019-06-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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