| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_294881271413951a95f284b588a68e66 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K2102-101
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K2102-102 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14636
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K39-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K30-353
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14683
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14601
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14612 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-146
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-42
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H04N5-369 |
| filingDate |
2020-04-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1219e0dc879b01ea373d590ee490365c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a0d3ebe321e3a974207d37897095514f |
| publicationDate |
2020-12-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2020241169-A1 |
| titleOfInvention |
Imaging element, lamination-type imaging element and solid-state imaging element, and method of manufacturing imaging element |
| abstract |
An imaging element according to the present disclosure comprises a photoelectric conversion unit formed by laminating a first electrode 21, a photoelectric conversion layer 23A made of an organic material, and a second electrode 22, wherein an inorganic semiconductor material layer 23B is formed between the first electrode 21 and the photoelectric conversion layer 23A, and a value ΔEN (=ENanion-ENcation) obtained by subtracting an average value ENcation of electronegativity of cationic species constituting the inorganic semiconductor material layer from an average value ENanion of electronegativity of anionic species constituting the inorganic semiconductor material layer 23B is less than 1.695, preferably, 1.624 or less. |
| priorityDate |
2019-05-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |