| abstract |
This imaging element comprises a photoelectric conversion unit obtained by laminating a first electrode 21, a photoelectric conversion layer 23A formed of an organic material, and a second electrode 22, wherein an inorganic oxide semiconductor material layer 23B is formed between the first electrode 21 and the photoelectric conversion layer 23A, and the inorganic oxide semiconductor material that constitutes the inorganic oxide semiconductor material layer 23B is formed of aluminum (Al) atoms, tin (Sn) atoms, zinc (Zn) atoms, and oxygen (O) atoms. |