http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2020241047-A1

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filingDate 2020-04-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2020-12-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber WO-2020241047-A1
titleOfInvention Joining method and structure
abstract Provided is a joining method that causes little damage to the materials to be joined, does not require a high pressure reduction process, enables maskless area selective application, and makes it possible to realize a high joining strength and connection reliability even in joint portions in a high-temperature region by low-temperature joining performed by simple operations in high-production facilities. The joining method comprises: a first step of forming a noble metal thin film having volume diffusion coefficient larger than the volume diffusion coefficient of the base material of the materials to be joined by using an atomic layer deposition method at a vacuum degree of 1.0 Pa or more on at least one of the joining surfaces of the two materials to be joined having a smooth surface; a second step of forming a laminate by stacking the two materials to be joined so that the joining surfaces of the two materials to be joined are connected to each other through the thin film; and a third step of heating the laminate to join the two materials together.
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