| abstract |
A laser having an output silicon waveguide comprises: a group III-V active structure used to form a light source of a laser, the group III-V active structure comprising a tunnel junction layer (4, 5) used to form a reverse tunneling current channel; an N-type substrate (2) provided at an upper surface of the tunnel junction layer (4, 5); a P-type layer (6, 7, 8) provided at a lower surface of the tunnel junction layer (4, 5); a quantum well active layer (9) provided at a lower surface of the P-type layer (6, 7, 8); an N-type layer (10, 11, 12) provided at a lower surface of the quantum well active layer (9); and a silicon waveguide structure (18) provided under the group III-V active structure and used to form an optical resonant cavity and a laser output waveguide together with the group III-V active structure. |