http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2020228164-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_679d08ac091a26e27635379903fe7cb1 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0254 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66462 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02458 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02502 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02378 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate | 2019-08-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5a204b8fef5b195d0ae0665afc99c45c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_46e9ed1d735ccce2834dfbe5c2f6cddb http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3264a2478cd67cb8d36246c743fdbf8d |
| publicationDate | 2020-11-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | WO-2020228164-A1 |
| titleOfInvention | Epitaxial growth method for reducing interfacial thermal resistance of gallium nitride high electron mobility field-effect transistor |
| abstract | An epitaxial growth method for reducing the interfacial thermal resistance of a gallium nitride high electron mobility field-effect transistor. An epitaxial material is grown using a vapor epitaxial growth method, such as chemical vapor deposition of a metal organic substance. A gallium nitride epitaxial wafer sequentially comprises, from bottom to top, a substrate (1), a lower aluminum nitride nucleation layer (201), an upper aluminum nitride nucleation layer (202), a gallium nitride transition layer (301), a gallium nitride buffer layer (302), a barrier layer (4), and a cap layer (5). Carrier gases used during growth processes of the lower aluminum nitride nucleation layer (201) and the upper aluminum nitride nucleation layer (202) are a hydrogen gas and a nitrogen gas, respectively. A carrier gas used during a growth process of the gallium nitride transition layer (301) is a nitrogen gas. A carrier gas used during a growth process of the gallium nitride buffer layer (302) is a hydrogen gas or a mixed gas of hydrogen and nitrogen. The invention utilizes a carrier gas changing process to reduce defect density in the aluminum nitride nucleation layers and the gallium nitride layers and to improve the quality of the interface between the aluminum nitride nucleation layers and the gallium nitride layers, thereby effectively reducing the interfacial thermal resistance of gallium nitride high electron mobility field-effect transistors. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112820636-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-114262937-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112820634-A |
| priorityDate | 2019-05-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 48.