| abstract |
The present invention pertains to a method for producing InP quantum dot precursors from a phosphorus source and an indium source, wherein a silylphosphine compound represented by general formula (1), which contains a compound represented by general formula (2) in an amount of 0.3 mol% or less, is used as the phosphorus source. Further, the present invention provides a method for producing InP quantum dots, said method comprising heating the InP quantum dot precursors at a temperature of 200-350°C inclusive to thereby give InP quantum dots. (R is as defined in the description.) |