| abstract |
The present invention provides a method for preparing an optoelectronic semiconductor chip and a bonding wafer used therein. A wafer material comprises wafers for epitaxy such as sapphire, silicon carbide, and gallium arsenide. According to the method, the conventional wafer is divided into a parent wafer and a child wafer, the application of a proper bonding technology to bond the parent wafer with the child wafer can withstand a change in warpage generated by a high temperature of 1,000ºC during epitaxy and the stress, and a non-physical destruction mode is used to unbond after epitaxy. The parent wafer can be recycled. The child wafer and an epitaxial layer are directly used for a chip manufacturing process without thinning or thinning partially, which solves the problems of a raw material of a large-size epitaxial wafer and chip processing costs. Moreover, an epitaxial wafer having a better wavelength uniformity is obtained. |