| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1ca439b4bdef60e4e9a8daeed74d7bf1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_748c63b255ec90c3a298bec870ac9cc1 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y40-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y20-00 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K11-77
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K11-70
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K11-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K11-56 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B82Y20-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B82Y40-00 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K11-56
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K11-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K11-77
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K11-70 |
| filingDate |
2020-04-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1b83a8f0d4d3dcca7aa197fe4e9e47ae
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5e49b0480501aa559ea1b7a8bbfd84aa
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_15032dd5061d86f20de29142ddc5831b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_492cc2fd1ca447320e6e26f92ff8d6b3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_eb7151dc7fe3831eeba2bd3caffb28ae
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b82def45977f85ba094a15d716aabb99 |
| publicationDate |
2020-10-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2020209579-A1 |
| titleOfInvention |
Iii-v-based quantum dots and method for manufacturing same |
| abstract |
Technology disclosed in the present invention provides a groups-III-V-based quantum dots and a method for manufacturing same, the quantum dots having a band gap control layer comprising: a seed comprising a group III element and a group V element; and a growth layer formed on the outer surface of the seed and comprising a group III element and a group V element. The quantum dots comprise an active metal which can have various oxidation numbers in at least one of the seed or growth layer forming the band gap control layer. |
| priorityDate |
2019-04-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |