http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2020207009-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ac31afbea1cbbb03498644721ffb4a62 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-502 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-156 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0095 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-502 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-007 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-40 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-15 |
| filingDate | 2019-11-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ed30439c9275d4340e076d147486bc62 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_18029211c12e7ec3559130d2ddb96eea http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c9b0527abf739165fefb1e13d9ca7b26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2bf55dfdab04e8bf67001aef7f4321fb http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_56b9ae8e0b36c00e76c45e96339f91b7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_46ca5fd54fb1f95f176b2d19ad924107 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_480ccd77625f207bd2925fa693c190f2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d7cab283f66c19f89a7d86c54cc0d175 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7d51209ae4374274340d2b5b8451d0bd http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0e693bbf89f585cbc81db86b113801b1 |
| publicationDate | 2020-10-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | WO-2020207009-A1 |
| titleOfInvention | Micro panchromatic qled array device based on deep silicon etching template quantum dot transfer process, and preparation method therefor |
| abstract | Disclosed is a micro panchromatic QLED array device based on a deep silicon etching template quantum dot transfer process. A blue-light LED epitaxial wafer is provided with an array-type square mesa structure penetrating through a p-type GaN layer (5) and a quantum well active layer (4) and reaching an n-type GaN layer (3) in depth; and micro holes are formed in the array-type square mesa structure by means of etching. Every 2*2 mesa structures constitute an RGB pixel unit, and in four micro holes, there are micro holes respectively filled with a red-light quantum dot, a green-light quantum dot and a yellow-light quantum dot and one micro hole emits blue light by itself/is filled with a blue-light quantum dot. Micro holes are etched through a silicon wafer by means of a deep silicon etching technique, the micro holes in the silicon wafer are aligned with quantum dot filling areas on a Micro-LED, and the quantum dots are placed into the Micro-LED through spin coating via the micro holes on the silicon wafer. Further disclosed is a preparation method therefor. Three different deep silicon etching masks can complete spin coating of green-light, red-light and yellow-light quantum dots in the Micro-LED, thereby achieving panchromatic display of RGB pixel units, and forming a QLED array device. |
| priorityDate | 2019-04-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 31.