http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2020205335-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c10320b05f723976a898536f012b60c2 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30655 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 |
| filingDate | 2020-03-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6edbb32829cd54d6efe76534b1863577 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ce48bdb809a0bf635732f053939926bd http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_beeea8a02734bf48f5ac5033504232c3 |
| publicationDate | 2020-10-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | WO-2020205335-A1 |
| titleOfInvention | Independent control of etching and passivation gas components for highly selective silicon oxide/silicon nitride etching |
| abstract | A method for selective plasma etching of silicon oxide relative to silicon nitride is described. The method includes providing a substrate containing a silicon oxide film and a silicon nitride film, and selectively etching the silicon oxide film relative to the silicon nitride film by: a1) exposing the substrate to a plasma-excited passivation gas containing carbon, sulfur, or both carbon and sulfur, where the plasma-excited passivation gas does not contain fluorine or hydrogen, and b1) exposing the substrate to a plasma-excited etching gas containing a fluorine-containing gas. The method can further include, between a1) and b1), an additional step of a2) exposing the substrate to a plasma-excited additional passivation gas containing a fluorocarbon gas, a hydrofluorocarbon gas, a hydrochlorocarbon gas, a hydrochlorofluorocarbon gas, or a hydrocarbon gas, or a combination thereof. |
| priorityDate | 2019-04-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 44.