| abstract |
[Problem] The purpose of the present invention is to provide a polishing composition which enables the speed-of-removal of a metal material to be the same as, or similar to, the speed-of-removal of a resin material in a chemical mechanical polishing process, and can even prevent or suppress the occurrence of differences in levels. [Solution] This polishing composition contains: silica, with at least some hydrogen atoms that constitute silanol groups located at the surface of the silica being substituted by cations of at least one type of metal atom M selected from the group consisting of aluminum, chromium, titanium, zirconium, iron, zinc, tin, scandium and gallium; abrasive grains; and a dispersion medium. The pH of the polishing composition is greater than 2 and not greater than 7. |