http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2020192569-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ac31afbea1cbbb03498644721ffb4a62 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-475 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28581 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0657 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-872 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66212 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-47 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-872 |
| filingDate | 2020-03-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6961b6397ed307355443e58e62778a1e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f0199cbbc4530956f551f72e6b439e5f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6a748e996d434d3db7359874afe30e38 |
| publicationDate | 2020-10-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | WO-2020192569-A1 |
| titleOfInvention | Schottky-type heterojunction structure, method of making the same and schottky barrier diode device including the same |
| abstract | A Schottky-type heterojunction structure comprises a semiconductor layer and a semimetal layer disposed on the semiconductor layer, wherein the semiconductor layer and the semimetal layer contact each other through Schottky contacts, wherein the semimetal layer includes semimetallic materials whose conduction band and valence band are overlapped or close to overlapped. The interface between the semimetal layer and the semiconductor layer shows improved quality. The Schottky barrier height of the heterojunction shows improved tunability through the modulation by the semimetal layer or the combination of the semimetal layer and the protection layer, and the interface treatments. The Schottky barrier diode (SBD) device based on this heterojunction structure has an ideal factor of about 1.05 and its noise equivalent power (NEP) is lower than 1 pW/Hz1/2. |
| priorityDate | 2019-03-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 32.