| abstract |
The present invention is characterized in that a W 18 O 49 peak is confirmed by X-ray diffraction analysis in a sputtering surface and a cross section orthogonal to the sputtering surface, the ratio I S(103) /I S(010) of the diffraction intensity I S(103) of the (103) plane and the diffraction intensity I S(010) of the (010) plane of W 18 O 49 in the sputtering surface is 0.57 or greater, the ratio I C(103) /I C(010) of the diffraction intensity I C(103) of the (103) plane and the diffraction intensity I C(010) of the (010) plane of W 18 O 49 in the cross section is 0.38 or less, and the area ratio of a W 18 O 49 phase in the surface parallel to the sputtering surface is 37% or greater. |