| abstract |
This method for selectively forming a film on a substrate comprises a preparation step, a first removal step, a first film formation step, a second film formation step, an oxidation step, and a second removal step. In the preparation step, a substrate having a surface to which a metal film and an insulating film are exposed is prepared. In the first removal step, a natural oxide film on the metal film is removed. In the first film formation step, a self-organized monomolecular film is formed on the insulating film by providing the substrate with a compound which is for forming the self-organized monomolecular film which suppresses the formation of a titanium nitride film, the compound having a functional group containing fluorine and carbon. In the second film formation step, a titanium nitride film is formed on the metal film. In the oxidation step, the surface of the substrate is oxidized. In the second removal step, a titanium oxide film formed on the metal film and the self-organized monomolecular film is removed by providing the surface of the substrate with the compound for forming a self-organized monomolecular film. |