| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d78fe473c8a29219129bbc8bb50f6a59 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N2001-2866 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02052
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B33-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-304
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N27-041
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N1-286
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N1-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N1-44 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-324
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N27-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-06 |
| filingDate |
2020-01-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1d6912ae3292d7b76e424075af584500
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_db60c8103339d70dbf8b3ca4f54e6729
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_30d959cd9b668a4c23c1a040a12191e3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9321ff9b747b1c5721c16d6a7e2ceba2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_130de02d79648682286acfd25f160c37
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_25aec06df085de4998b0b6fa4bd607d6 |
| publicationDate |
2020-09-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2020179284-A1 |
| titleOfInvention |
Resistivity measuring method for silicon single crystal |
| abstract |
This resistivity measuring method for a silicon single crystal for measuring the resistivity of a silicon single crystal using the four-point probe method, wherein said method includes: a first grinding step for grinding at least a surface of the silicon single crystal where the resistivity is to be measured; a cleaning step for cleaning the silicon single crystal that has been subjected to the first grinding step; a donor killer heat treatment step for heat-treating the silicon single crystal that has been subjected to the cleaning step; and a second grinding step for grinding at least the surface of the silicon single crystal that has been subjected to the donor killer heat treatment step where the resistivity measurement is to be performed. After the second grinding step is performed, the resistivity of the silicon single crystal is measured using the four-point probe method. The foregoing provides a resistivity measuring method for a silicon single crystal by which measurement can be performed stably over an extended period of time after donor killer heat treatment. |
| priorityDate |
2019-03-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |