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filingDate 2020-02-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8fe00bda5326df81a8bf733effcea346
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publicationDate 2020-09-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber WO-2020175427-A1
titleOfInvention Semiconductor device production method, substrate processing device, and program
abstract The present invention provides technology for improving the uniformity of the thickness of a metal oxide film formed upon a substrate. Provided is technology comprising: (a) a step for supplying a metal-containing gas to a substrate in a processing chamber; and (b) a step for supplying an oxygen-containing gas to the substrate in the processing chamber, with the speed of the flow of the oxygen-containing gas being 7.0 m/s to 8.5 m/s, and the partial pressure of the oxygen-containing gas being 9.0 Pa to 12.0 Pa.
priorityDate 2019-02-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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