| abstract |
A quantum device includes a first set of protrusions (304) formed on a substrate (302, 302A) and a second set of protrusions formed on a qubit chip (310). The quantum device also includes a set of bumps (308) formed on an interposer (306), the set of bumps formed of a material having above a threshold ductility at a room temperature range, wherein a first subset of the set of bumps is configured to cold weld to the first set of protrusions and a second subset of the set of bumps is configured to cold weld to the second set of protrusions. |