| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_cd75bebe3b375c0b208631e4bb176ed0 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0924
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66492
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7833
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-092
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66803
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7851 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238 |
| filingDate |
2019-12-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_87f2972720af3fa14bfdc306a71b2849
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8874f944b75f010d156ec88f87977621
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9ab0c5ccba559840e03b80596de655ab
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_902352a934244ce77f2d4411606f9109
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5aec147d57aa33671150c92278a9983c |
| publicationDate |
2020-07-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2020141758-A1 |
| titleOfInvention |
Transistor element, ternary inverter apparatus comprising same, and method for producing same |
| abstract |
A transistor element according to the present invention comprises: a substrate; a fin structure extending in the parallel direction on the substrate; source and drain regions provided on the upper part of the fin structure; a constant current-forming layer provided on the lower part of the fin structure; a gate insulating film provided on both sides surfaces and top surface of the upper part of the fin structure; and a gate electrode provided on the gate insulating film, wherein the gate electrode is provided between the source and drain regions on the fin structure, and constant current-forming layer establishes a constant current between the drain region and substrate, and the constant current is independent of the gate voltage applied to the gate electrode. |
| priorityDate |
2018-12-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |