| abstract |
Provided are: a silicon epitaxial wafer production method that can suppress DIC defects; and a silicon epitaxial wafer. Provided is the silicon epitaxial wafer production method in which an epitaxial layer is grown in a vapor phase on the principal plane of a silicon monocrystalline wafer, the principal plane being a {110} plane or a plane having an off-angle of less than 1 degree from the {110} plane, wherein the temperature of the silicon monocrystalline wafer is set to 1,100°C to 1,135°C, and the epitaxial layer is grown in a vapor phase at a growth rate of 2.0 μm/min to 3.0 μm/min. |