http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2020135197-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_db9efde660b78f98b102046e09d07ab7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6ce9ffce41948cb062486d2c71703465 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R27-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R27-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-2637 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-26 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R27-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26 |
| filingDate | 2019-12-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c9d37aca7cdfb35696330c6837170714 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e9b92cfed37e28d6e3c067baa45b494a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d3cdd762cabfc7ccad55932334c16f0b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_160abba041e245e1b44edfeb8179604b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bbfa1e4549387c6f5d281dddeb4c2a9f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7a0c2f7355663eede45f416209cc794f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5ee8e5a016f829f2bdd51c0e0838875d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_03881c6437ff1116a98eb95d5b7b4116 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f57b919beb3ee0d15f4be593dbdf7725 |
| publicationDate | 2020-07-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | WO-2020135197-A1 |
| titleOfInvention | Circuit for testing dynamic resistance of gallium nitride device |
| abstract | A circuit for testing dynamic resistance of a gallium nitride device Q1, comprising a gate drive module (3) for driving a device to be tested, a clamp circuit (1), and a load module (2). One end of the load module (2) is connected to a power supply DC. The clamp circuit (1) comprises a voltage stabilizing module (12) and a high-voltage diode D1. An anode of the high-voltage diode D1 is connected to one end of the voltage stabilizing module (12). A cathode of the high-voltage diode D1 and the other end of the load module (2) are connected to a drain electrode of a gallium nitride device Q1 to be tested. The other end of the voltage stabilizing module (12) is connected to the power ground and is used for connecting to a source electrode of said gallium nitride device Q1. The clamp circuit (1) further comprises a constant current module (11). A constant current output by the constant current module (11) flows to said gallium nitride device Q1 by means of the high-voltage diode D1. A gate control signal of said gallium nitride device Q1 is provided by the gate drive module (3). When said gallium nitride device Q1 is turned on, a current flowing through the high-voltage diode D1 is provided by the constant current module (11). When said gallium nitride device Q1 is turned off, a voltage tested at a voltage test point is stabilized by the voltage stabilizing module (12). |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2023104095-A1 |
| priorityDate | 2018-12-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 29.